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BUK7C10-75AITE
TrenchPLUS standard level FET
Rev. 02 -- 18 March 2003 Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOSTM technology, featuring very low on-state resistance. Also includes TrenchPLUS current sensing, and diodes for ESD and temperature protection. Product availability: BUK7C10-75AITE in SOT427 (D2-PAK).
1.2 Features
s Q101 compliant s ESD protection s Integrated temperature sensor s Integrated current sensor.
1.3 Applications
s Variable Valve Timing for engines s Automotive and power switching s Electrical Power Assisted Steering s Fan control.
1.4 Quick reference data
s VDS 75 V s ID 114 A s RDSon = 8.8 m (typ) s VF = 658 mV (typ) s SF = -1.54 mV/K (typ) s ID/Isense = 500 (typ).
2. Pinning information
Table 1: Pin 1 2 3 4 mb Pinning - SOT427 (D2-PAK) simplified outline and symbol Description gate (g) Isense anode (a) drain (d) mounting base; connected to drain (d) Pin 5 6 7 Description cathode (k)
d a
Simplified outline
Symbol
Kelvin source source (s)
1234567
mb
g
Front view
MBK128
MBL362
Isense
s
k Kelvin source
SOT427 (D2-PAK)
Philips Semiconductors
BUK7C10-75AITE
TrenchPLUS standard level FET
3. Limiting values
Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGS VGS ID Parameter drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 C; VGS = 10 V; Figure 2 and 3 Tmb = 100 C; VGS = 10 V; Figure 2 IDM Ptot IGS(CL) peak drain current total power dissipation gate-source clamping current Tmb = 25 C; pulsed; tp 10 s; Figure 3 Tmb = 25 C; Figure 1 continuous tp = 5 ms; = 0.01 Visol(FET-TSD) FET to temperature sense diode isolation voltage Tstg Tj IDR IDRM EDS(AL)S storage temperature junction temperature reverse drain current (DC) peak reverse drain current non-repetitive drain-source avalanche energy Tmb = 25 C Tmb = 25 C; pulsed; tp 10 s unclamped inductive load; ID = 75 A; VDS 75 V; VGS = 10 V; RGS = 50 ; starting Tj = 25 C
[1] [2] [1] [2] [2]
Conditions
Min -55 -55 -
Max 75 75 20 114 75 75 456 272 10 50 100 +175 +175 114 75 456 739
Unit V V V A A A A W mA mA V C C A A A mJ
Source-drain diode
Avalanche ruggedness
Electrostatic discharge Vesd electrostatic discharge voltage; pins Human Body Model; C = 100 pF; 1,2,4,6,7 R = 1.5 k 6 kV
[1] [2]
Current is limited by power dissipation chip rating Continuous current is limited by package.
9397 750 11048
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 02 -- 18 March 2003
2 of 15
Philips Semiconductors
BUK7C10-75AITE
TrenchPLUS standard level FET
120 Pder (%) 80
03na19
120 ID (A)
03ni93
80
Capped at 75 A due to package
40
40
0 0 50 100 150 200 Tmb (C)
0 0 50 100 150 200 Tmb (C)
P tot P der = ---------------------- x 100% P
tot ( 25 C )
VGS 10 V
Fig 1. Normalized total power dissipation as a function of mounting base temperature.
Fig 2. Continuous drain current as a function of mounting base temperature.
103 ID (A)
03ni94
Limit RDSon = VDS/ID tp = 10 s
102 100 s
Capped at 75 A due to package DC 10
1 ms
10 ms 100 ms
1 1 10 102 VDS (V) 103
Tmb = 25 C; IDM single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 11048
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 02 -- 18 March 2003
3 of 15
Philips Semiconductors
BUK7C10-75AITE
TrenchPLUS standard level FET
4. Thermal characteristics
Table 3: Symbol Rth(j-a) Rth(j-mb) Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to mounting base Conditions mounted on printed-circuit board; minimum footprint Figure 4 Min Typ Max 50 0.55 Unit K/W K/W
4.1 Transient thermal impedance
1 Z th(j-mb) (K/W)
03ni64
= 0.5
10-1
0.2 0.1 0.05 0.02
10-2
P
=
tp T
single shot
tp T t
10-3 10-6 10-5 10-4 10-3 10-2 10-1 1 tp (s) 10
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 11048
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 02 -- 18 March 2003
4 of 15
Philips Semiconductors
BUK7C10-75AITE
TrenchPLUS standard level FET
5. Characteristics
Table 4: Characteristics Tj = 25 C unless otherwise specified. Symbol V(BR)DSS Parameter drain-source breakdown voltage Conditions ID = 0.25 mA; VGS = 0 V Tj = 25 C Tj = -55 C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 Tj = 25 C Tj = 175 C Tj = -55 C IDSS drain-source leakage current VDS = 75 V; VGS = 0 V Tj = 25 C Tj = 175 C V(BR)GSS IGSS gate-source breakdown voltage gate-source leakage current IG = 1 mA; -55 C < Tj < 175 C VGS = 10 V; VDS = 0 V Tj = 25 C Tj = 175 C RDSon drain-source on-state resistance VGS = 10 V; ID = 50 A; Figure 7 and 8 Tj = 25 C Tj = 175 C VF SF Vhys ID/Isense forward voltage, temperature sense diode temperature coefficient temperature sense diode forward voltage hysteresis temperature sense diode IF = 250 A IF = 250 A; -55 C < Tj < 175 C 125 A < IF < 250 A 648 -1.4 25 450 8.8 658 -1.54 32 500 10 21 668 -1.68 50 550 m m mV mV/K mV 22 1000 10 nA A 20 0.1 22 10 250 A A V 2 1 3 4 4.4 V V V 75 70 V V Min Typ Max Unit Static characteristics
ratio of drain current to sense VGS > 10 V; current -55 C < Tj < 175 C total gate charge gate-source charge gate-drain (Miller) charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time
Rev. 02 -- 18 March 2003
Dynamic characteristics Qg(tot) Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf
9397 750 11048
VGS = 10 V; VDS = 60 V; ID = 25 A; Figure 14
-
121 20 44 4700 800 455 35 108 185 100
-
nC nC nC pF pF pF nS nS nS nS
5 of 15
VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 12
VDS = 30 V; RL = 1.2 ; VGS = 10 V; RG = 10
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Philips Semiconductors
BUK7C10-75AITE
TrenchPLUS standard level FET
Table 4: Characteristics...continued Tj = 25 C unless otherwise specified. Symbol Ld Parameter internal drain inductance Conditions measured from upper edge of drain mounting base to centre of die measured from source lead to source bond pad IS = 25 A; VGS = 0 V; Figure 18 IS = 20 A; dIS/dt = -100 A/s VGS = -10 V; VDS = 30 V Min Typ 2.5 Max Unit nH
Ls
internal source inductance
-
7.5
-
nH
Source-drain diode VSD trr Qr source-drain (diode forward) voltage reverse recovery time recovered charge 0.85 75 270 1.2 V ns nC
9397 750 11048
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 02 -- 18 March 2003
6 of 15
Philips Semiconductors
BUK7C10-75AITE
TrenchPLUS standard level FET
350 ID (A) 280 20
03ni74
18 RDSon (m)
03ni76
10
9
label is VGS (V) 8.5 8 7.5
14 210 7 6.5 140 6 5.5 70 5 4.5 0 0 2 4 6 8 10 VDS (V) 6 5 10 15 VGS (V) 20
10
Tj = 25 C; tp = 300 s
Tj = 25 C; ID = 50 A
Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values.
Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values.
20 RDSon (m) VGS = 5.5 V 6 V 6.5 V 7V 8V
03ni75
2.4 a
03nb25
16 10 V
1.6
20 V 12 0.8
8 0 70 140 210 280 350 ID (A)
0 -60 0 60 120 T (C) 180 j
Tj = 25 C; tp = 300 s
R DSon a = ---------------------------R DSon ( 25 C ) Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature.
Fig 7. Drain-source on-state resistance as a function of drain current; typical values.
9397 750 11048
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 02 -- 18 March 2003
7 of 15
Philips Semiconductors
BUK7C10-75AITE
TrenchPLUS standard level FET
5 VGS(th) (V) 4 max
03aa32
10-1 ID (A) 10-2
03aa35
3
typ
10-3
min
typ
max
2
min
10-4
1
10-5
0 -60 0 60 120 Tj (C) 180
10-6 0 2 4 VGS (V) 6
ID = 1 mA; VDS = VGS
Tj = 25 C; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of junction temperature.
Fig 10. Sub-threshold drain current as a function of gate-source voltage.
80 gfs (S) 60
03ni77
8000 C (pF) 6000 Ciss
03ni97
40
4000
Crss Coss
20
2000
0 0 25 50 75 ID (A) 100
0 10-2 10-1 1 10 VDS(V) 102
Tj = 25 C; VDS = 25 V
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
9397 750 11048
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 02 -- 18 March 2003
8 of 15
Philips Semiconductors
BUK7C10-75AITE
TrenchPLUS standard level FET
100 ID (A) 75
03ni78
10 VGS (V) 8 14 V 6
03ni92
50 4 175 C 25 2 Tj = 25 C 0 0.0 2.0 4.0 VGS (V) 6.0 0 0 50 100 QG (nC) 150 VDS = 60 V
VDS = 25 V
Tj = 25 C; ID = 25 A
Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values.
Fig 14. Gate-source voltage as a function of turn-on gate charge; typical values.
700 VF (mV)
03ne84
1.70 -SF (mV/K) 1.65
03ne85
max
600
1.60
1.55
typ
500
1.50
1.45
min
400 0 50 100 150 Tj (C) 200
1.40 645 650 655 660 665 670 675 VF (mV)
IF = 250 A
VF at Tj = 25 C; IF = 250 A
Fig 15. Forward voltage of temperature sense diode as a function of junction temperature; typical values.
Fig 16. Temperature coefficient of temperature sense diode as a function of forward voltage; typical values.
9397 750 11048
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 02 -- 18 March 2003
9 of 15
Philips Semiconductors
BUK7C10-75AITE
TrenchPLUS standard level FET
600 ID/Isense
03ni98
100 IS (A) 75
03ni79
550
500
50
175 C 450 25 Tj = 25 C 400 4 8 12 16 VGS (V) 20 0 0.0 0.4 0.8 1.2 VSD (V) 1.6
ID = 25 A
VGS = 0 V
Fig 17. Drain-sense current ratio as a function of gate-source voltage; typical values.
Fig 18. Reverse diode current as function of reverse diode voltage; typical values.
9397 750 11048
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 02 -- 18 March 2003
10 of 15
Philips Semiconductors
BUK7C10-75AITE
TrenchPLUS standard level FET
6. Package outline
Plastic single-ended surface mounted package (Philips version of D2-PAK); 7 leads (one lead cropped) SOT427
A E A1
D1 mounting base
D
HD
4
Lp
1
7
b e e e e e e
c Q
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 4.50 4.10 A1 1.40 1.27 b 0.85 0.60 c 0.64 0.46 D max. 11 D1 1.60 1.20 E 10.30 9.70 e 1.27 Lp 2.90 2.10 HD 15.80 14.80 Q 2.60 2.20
OUTLINE VERSION SOT427
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 99-06-25 01-04-18
Fig 19. SOT427 (D2-PAK).
9397 750 11048 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 02 -- 18 March 2003
11 of 15
Philips Semiconductors
BUK7C10-75AITE
TrenchPLUS standard level FET
7. Soldering
handbook, full pagewidth
10.85 10.60 10.50 1.50 7.50 7.40 1.70
2.25 2.15
8.15
8.35
8.275 1.50
4.60
0.30 4.85
5.40 8.075
7.95
3.00
0.20
solder lands solder resist occupied area solder paste
1.27 (4x)
2.54 8.92
0.70 0.80
MSD059
Dimensions in mm.
Fig 20. Reflow soldering footprint for SOT427.
9397 750 11048
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 02 -- 18 March 2003
12 of 15
Philips Semiconductors
BUK7C10-75AITE
TrenchPLUS standard level FET
8. Revision history
Table 5: Rev Date 02 20030318 Revision history CPCN Description Product data (9397 750 11048) Modification:
*
01 20020725 -
Correction to Figure 3
Product data (9397 750 09881)
9397 750 11048
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 02 -- 18 March 2003
13 of 15
Philips Semiconductors
BUK7C10-75AITE
TrenchPLUS standard level FET
9. Data sheet status
Level I II Data sheet status[1] Objective data Preliminary data Product status[2][3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
III
Product data
Production
[1] [2] [3]
Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
10. Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
12. Trademarks
TrenchMOS -- is a trademark of Koninklijke Philips Electronics N.V.
11. Disclaimers
Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors
Contact information
For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com.
9397 750 11048
Fax: +31 40 27 24825
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 02 -- 18 March 2003
14 of 15
Philips Semiconductors
BUK7C10-75AITE
TrenchPLUS standard level FET
Contents
1 1.1 1.2 1.3 1.4 2 3 4 4.1 5 6 7 8 9 10 11 12 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
(c) Koninklijke Philips Electronics N.V. 2003. Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 18 March 2003 Document order number: 9397 750 11048

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